NULL

NULL

Back ground and objectives: Excessive use of chemical antifungal agents during the food production becomes a serious issue threatening our health especially in fresh fruits, which passes the applied chemicals into the human body quickly. The research evaluated the effect of different natural oils on flame seedless grapes (Vitis vinifera L.) as delicate fruits affected highly with fungal infection or temperature changes during different storage periods and marketing temperatures by testing the fruits quality and the antifungal properties of oils against post-harvest fungi. Materials and methods: Thirteen years old flames seedless growing on sandy soil were sprayed with clove, black seed and garlic oil during two seasons 2016 and 2017. After harvest, the clusters were sorted in room or cold temperature for different storage periods. Clusters were analyzed for its physical, chemical and microbial prosperities. Results: Spraying natural oils (especially garlic oil) significantly improved the berries quality in terms of increasing berry weight, length, width, TSS% and TSS%/ TA% compared to unsprayed ones. They also reduced the post-harvest fungal counts up to 75% decreasing in garlic oil treated samples. Conclusion: Using natural oils protected the fruits from post-harvest fungi and also generated protective coating layer decreased water loss during storage periods which increased the fruits quality and lifetime.

Chalcogenide glasses of (Se90Te10)100-x Inx (x = 0, 3, 6, 9, 11) alloys are prepared by melt quench technique. Differential scanning calorimetry (DSC) technique with different heating rate is used to study the dependence of the glass transition temperature (Tg) and fragility dynamics m on the In content in the Se-Te matrix. It is observed an increase of Tg with increasing In content. The glass transition temperature is differently defined according to the different degree of conversion of the glass. The activation energy of the glass transition (Eg) is evaluated using Kissinger, Moynihan kinetic and the partial area (isoconversional) methods. Analysis of experimental data shows that Eg changes with the degree of conversion from the glassy to the supercooled phase. The variation of the fragility with indium content is attributed to the formation of network structure. The employed theoretical models to describe the kinetics of the glass transition are valid

Chalcogenide glasses of (Se90Te10)100-x Inx (x = 0, 3, 6, 9, 11) alloys are prepared by melt quench technique. Differential scanning calorimetry (DSC) technique with different heating rate is used to study the dependence of the glass transition temperature (Tg) and fragility dynamics m on the In content in the Se-Te matrix. It is observed an increase of Tg with increasing In content. The glass transition temperature is differently defined according to the different degree of conversion of the glass. The activation energy of the glass transition (Eg) is evaluated using Kissinger, Moynihan kinetic and the partial area (isoconversional) methods. Analysis of experimental data shows that Eg changes with the degree of conversion from the glassy to the supercooled phase. The variation of the fragility with indium content is attributed to the formation of network structure. The employed theoretical models to describe the kinetics of the glass transition are valid

Chalcogenide glasses of (Se90Te10)100-x Inx (x = 0, 3, 6, 9, 11) alloys are prepared by melt quench technique. Differential scanning calorimetry (DSC) technique with different heating rate is used to study the dependence of the glass transition temperature (Tg) and fragility dynamics m on the In content in the Se-Te matrix. It is observed an increase of Tg with increasing In content. The glass transition temperature is differently defined according to the different degree of conversion of the glass. The activation energy of the glass transition (Eg) is evaluated using Kissinger, Moynihan kinetic and the partial area (isoconversional) methods. Analysis of experimental data shows that Eg changes with the degree of conversion from the glassy to the supercooled phase. The variation of the fragility with indium content is attributed to the formation of network structure. The employed theoretical models to describe the kinetics of the glass transition are valid

Chalcogenide glasses of (Se90Te10)100-x Inx (x = 0, 3, 6, 9, 11) alloys are prepared by melt quench technique. Differential scanning calorimetry (DSC) technique with different heating rate is used to study the dependence of the glass transition temperature (Tg) and fragility dynamics m on the In content in the Se-Te matrix. It is observed an increase of Tg with increasing In content. The glass transition temperature is differently defined according to the different degree of conversion of the glass. The activation energy of the glass transition (Eg) is evaluated using Kissinger, Moynihan kinetic and the partial area (isoconversional) methods. Analysis of experimental data shows that Eg changes with the degree of conversion from the glassy to the supercooled phase. The variation of the fragility with indium content is attributed to the formation of network structure. The employed theoretical models to describe the kinetics of the glass transition are valid

Chalcogenide Se90Sb10 thin films are deposited by thermal evaporation from the bulk alloy. X-ray diffraction examination for the annealed films shows the amorphous-crystalline transformation. This is beneficial for optical disk data storage technology. The crystallinity is improved by increasing the annealing temperature. The films annealed at relatively low temperatures exhibit highly transparence reaching to about 90% at incident light of wavelength of 900 nm. The as-prepared and annealed Se90Sb10 films reveal an indirect allowed optical transition. The annealed film at 473 K has an optical band gap of 1.676 eV which is suitable value for solar cell as photovoltaic application. Both the indirect optical energy band gap (Eg) and the oscillator energy (Eo) decrease whereas the oscillator strength (Ed) increases with increasing the annealing temperature. The annealing increases the conductivity and decreases the activation energy for conduction resulting in enhancement of film properties for adapting to solar cells

Chalcogenide Se90Sb10 thin films are deposited by thermal evaporation from the bulk alloy. X-ray diffraction examination for the annealed films shows the amorphous-crystalline transformation. This is beneficial for optical disk data storage technology. The crystallinity is improved by increasing the annealing temperature. The films annealed at relatively low temperatures exhibit highly transparence reaching to about 90% at incident light of wavelength of 900 nm. The as-prepared and annealed Se90Sb10 films reveal an indirect allowed optical transition. The annealed film at 473 K has an optical band gap of 1.676 eV which is suitable value for solar cell as photovoltaic application. Both the indirect optical energy band gap (Eg) and the oscillator energy (Eo) decrease whereas the oscillator strength (Ed) increases with increasing the annealing temperature. The annealing increases the conductivity and decreases the activation energy for conduction resulting in enhancement of film properties for adapting to solar cells

Chalcogenide Se90Sb10 thin films are deposited by thermal evaporation from the bulk alloy. X-ray diffraction examination for the annealed films shows the amorphous-crystalline transformation. This is beneficial for optical disk data storage technology. The crystallinity is improved by increasing the annealing temperature. The films annealed at relatively low temperatures exhibit highly transparence reaching to about 90% at incident light of wavelength of 900 nm. The as-prepared and annealed Se90Sb10 films reveal an indirect allowed optical transition. The annealed film at 473 K has an optical band gap of 1.676 eV which is suitable value for solar cell as photovoltaic application. Both the indirect optical energy band gap (Eg) and the oscillator energy (Eo) decrease whereas the oscillator strength (Ed) increases with increasing the annealing temperature. The annealing increases the conductivity and decreases the activation energy for conduction resulting in enhancement of film properties for adapting to solar cells