In the present work, Al-Mg-Zn alloys with compositions of Al- 2 at.% Zn — x at.% Mg, (x=1.8, 2, 2.4, 3 and 4.2) have been investigated. The developed precipitates and their growth have been followed as a function of aging temperature. The precipitates morphology was examined by scanning electron microscope (SEM) and correlated with the microhardness (HV) and differential scanning calorimetry (DSC) of the specimens. The structure of the precipitates has been detected by X-ray diffraction (XRD). Mostly, the precipitates are characterized as T′, T, η′ and η phases. The XRD charts analysis show that T′(Mg32 (Al, Zn)49) and T (Mg32 (Al, Zn)49) are cubic whereas η′ (MgZn2) and η (MgZn2) are hexagonal.η′ andrη phases have had a hexagonal structure of the same composition with slight different lattice parameters .

In the present work, Al-Mg-Zn alloys with compositions of Al- 2 at.% Zn — x at.% Mg, (x=1.8, 2, 2.4, 3 and 4.2) have been investigated. The developed precipitates and their growth have been followed as a function of aging temperature. The precipitates morphology was examined by scanning electron microscope (SEM) and correlated with the microhardness (HV) and differential scanning calorimetry (DSC) of the specimens. The structure of the precipitates has been detected by X-ray diffraction (XRD). Mostly, the precipitates are characterized as T′, T, η′ and η phases. The XRD charts analysis show that T′(Mg32 (Al, Zn)49) and T (Mg32 (Al, Zn)49) are cubic whereas η′ (MgZn2) and η (MgZn2) are hexagonal.η′ andrη phases have had a hexagonal structure of the same composition with slight different lattice parameters .

In the present work, Al-Mg-Zn alloys with compositions of Al- 2 at.% Zn — x at.% Mg, (x=1.8, 2, 2.4, 3 and 4.2) have been investigated. The developed precipitates and their growth have been followed as a function of aging temperature. The precipitates morphology was examined by scanning electron microscope (SEM) and correlated with the microhardness (HV) and differential scanning calorimetry (DSC) of the specimens. The structure of the precipitates has been detected by X-ray diffraction (XRD). Mostly, the precipitates are characterized as T′, T, η′ and η phases. The XRD charts analysis show that T′(Mg32 (Al, Zn)49) and T (Mg32 (Al, Zn)49) are cubic whereas η′ (MgZn2) and η (MgZn2) are hexagonal.η′ andrη phases have had a hexagonal structure of the same composition with slight different lattice parameters .

The effect of temperature in the range of 300–450 K and the indium content on the electrical and thermoelectric properties of Ge20Se80−xInx (0.0≤x≤24 at%) chalcogenide glassy thin films have been studied. From dc electrical and thermoelectric measurements, it was observed that the activation energies for electrical conductivity (ΔE) and for thermoelectric (ΔEs) decrease while the conductivity (σ) and Seebeck coefficient (S) increase upon introducing In into the Ge–Se glasses. In contrast to the behavior obtained with Bi or Pb doping, In incorporated in Ge–Se does not lead to a p-to n-type conduction inversion. The power factor (P) which is strongly depends on both of the Seebeck coefficient and the electrical conductivity. According to the obtained results, the Ge20Se80−xInx films can be considered potential candidates for incurring high action thermoelectric materials.

Different compositions of amorphous Ge15Se85-xCux thin films were deposited onto glass substrates by
the thermal evaporation technique. Their amorphous structural characteristics were studied by X-ray
diffraction (XRD). The optical constants (n, k) of amorphous Ge15Se85-xCux thin films were obtained by
fitting the ellipsometric parameters (j and D) data for the first time using three layers model system in
the wavelength range 300e1100 nm. It was found that the refractive index, n, increases with the increase
of Cu content. The possible optical transition in these films is found to be indirect transitions. The optical
energy gap decreases linearly from 1.83 to 1.44 eV with increasing the Cu. The experimental transmittances
spectrum can be simulated using the thickness and optical constants modeled by spectroscopic
ellipsometry model.

Different compositions of amorphous Ge15Se85-xCux thin films were deposited onto glass substrates by
the thermal evaporation technique. Their amorphous structural characteristics were studied by X-ray
diffraction (XRD). The optical constants (n, k) of amorphous Ge15Se85-xCux thin films were obtained by
fitting the ellipsometric parameters (j and D) data for the first time using three layers model system in
the wavelength range 300e1100 nm. It was found that the refractive index, n, increases with the increase
of Cu content. The possible optical transition in these films is found to be indirect transitions. The optical
energy gap decreases linearly from 1.83 to 1.44 eV with increasing the Cu. The experimental transmittances
spectrum can be simulated using the thickness and optical constants modeled by spectroscopic
ellipsometry model.

The variations in structure and optical properties of amorphous a-Se and a-M5Se95 (M = Ge, Ga and
Zn) films have been studied based on FTIR and optical measurements. FTIR transmittance spectra for a-Se and
a-M5Se95 (M = Ge, Ga and Zn) glasses were measured as a function of wavenumber. The addition of Ge, Ga and Zn
increases the vibrational frequency of the a-Se main band. The absorption edge of Ge5Se95 shifted towards long side
of the wavelength in comparison with that of a-Se film. This shift increases gradually in the case of Ga5Se95 and
Zn5Se95 films. So, the optical bandgap ofM5Se95 films was decreased, but the index of refraction was increased. The
first and third order of electric susceptibility (χ(1) and χ(3)) and non-linear index of refraction (n2) were increased
by adding Ge, Ga and Zn into a-Se.

The variations in structure and optical properties of amorphous a-Se and a-M5Se95 (M = Ge, Ga and
Zn) films have been studied based on FTIR and optical measurements. FTIR transmittance spectra for a-Se and
a-M5Se95 (M = Ge, Ga and Zn) glasses were measured as a function of wavenumber. The addition of Ge, Ga and Zn
increases the vibrational frequency of the a-Se main band. The absorption edge of Ge5Se95 shifted towards long side
of the wavelength in comparison with that of a-Se film. This shift increases gradually in the case of Ga5Se95 and
Zn5Se95 films. So, the optical bandgap ofM5Se95 films was decreased, but the index of refraction was increased. The
first and third order of electric susceptibility (χ(1) and χ(3)) and non-linear index of refraction (n2) were increased
by adding Ge, Ga and Zn into a-Se.

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