From the X-ray diffraction data of Se1-xGex chalcogenide glasses (00.3) the radial distribution function (RDF) has been calculated. Using the RDF results the short- and medium-range order has been discussed. The results of the RDF indicate that the basic structure unit of the system is tetrahedral and the atoms are distributed according to the chain-crossing model and the edge- as well as corner-sharing tetrahedra. The amorphous and the crystalline phases have the same structure unit (for 0.2 at Ge). The germanium content does not have any influence on the basic structure unit. For x>0.1, the results indicate that the amorphous phase has medium-range order or topology order

Thin films of In0.10Se90 of thickness 200 Å are prepared by vacuum evaporation. The optical gaps (Eoptg) and the high-frequency dielectric constant (ɛɛ∞) are determined from the absorption spectrum of the In0.10Se0.90 films heat-treated at different temperatures. The effect of the temperature of heat treatment on the optical gap (Eoptg) and the high-frequency dielectric constant (ɛɛ∞) of the films is interpreted in terms of the density of state model of Mott and Davis and explained as being due to the saturation of bonds in the amorphous solid. It is shown that in the case of In0.10Se0.90 a transition from the amorphous to the crystalline state takes place at 373 K. The structural analysis of In0.10Se0.90 films by using XRD is reported.

Thin films of In0.10Se90 of thickness 200 Å are prepared by vacuum evaporation. The optical gaps (Eoptg) and the high-frequency dielectric constant (ɛɛ∞) are determined from the absorption spectrum of the In0.10Se0.90 films heat-treated at different temperatures. The effect of the temperature of heat treatment on the optical gap (Eoptg) and the high-frequency dielectric constant (ɛɛ∞) of the films is interpreted in terms of the density of state model of Mott and Davis and explained as being due to the saturation of bonds in the amorphous solid. It is shown that in the case of In0.10Se0.90 a transition from the amorphous to the crystalline state takes place at 373 K. The structural analysis of In0.10Se0.90 films by using XRD is reported.

Thin films of In0.10Se90 of thickness 200 Å are prepared by vacuum evaporation. The optical gaps (Eoptg) and the high-frequency dielectric constant (ɛɛ∞) are determined from the absorption spectrum of the In0.10Se0.90 films heat-treated at different temperatures. The effect of the temperature of heat treatment on the optical gap (Eoptg) and the high-frequency dielectric constant (ɛɛ∞) of the films is interpreted in terms of the density of state model of Mott and Davis and explained as being due to the saturation of bonds in the amorphous solid. It is shown that in the case of In0.10Se0.90 a transition from the amorphous to the crystalline state takes place at 373 K. The structural analysis of In0.10Se0.90 films by using XRD is reported.

The optical absorption of as-prepared and thermally annealed As24.5Te71Cd4.5 thin films was measured. The optical energy gap Eo increased from 0.58 to 0.85 eV with increasing thickness of the as-prepared films from 58 to 125 nm. Films annealed at temperatures higher than 423 K showed a decrease in Eo. The electrical conductivity of the as-prepared and annealed films was measured in the temperature range 80–300 K. An amorphous-crystalline transformation was observed after annealing at temperatures higher than 423 K. The results obtained are discussed on the basis of amorphous-crystalline transformations

The optical absorption of as-prepared and thermally annealed As24.5Te71Cd4.5 thin films was measured. The optical energy gap Eo increased from 0.58 to 0.85 eV with increasing thickness of the as-prepared films from 58 to 125 nm. Films annealed at temperatures higher than 423 K showed a decrease in Eo. The electrical conductivity of the as-prepared and annealed films was measured in the temperature range 80–300 K. An amorphous-crystalline transformation was observed after annealing at temperatures higher than 423 K. The results obtained are discussed on the basis of amorphous-crystalline transformations

The optical absorption of as-prepared and thermally annealed As24.5Te71Cd4.5 thin films was measured. The optical energy gap Eo increased from 0.58 to 0.85 eV with increasing thickness of the as-prepared films from 58 to 125 nm. Films annealed at temperatures higher than 423 K showed a decrease in Eo. The electrical conductivity of the as-prepared and annealed films was measured in the temperature range 80–300 K. An amorphous-crystalline transformation was observed after annealing at temperatures higher than 423 K. The results obtained are discussed on the basis of amorphous-crystalline transformations

The optical absorption of as-prepared and thermally annealed As24.5Te71Cd4.5 thin films was measured. The optical energy gap Eo increased from 0.58 to 0.85 eV with increasing thickness of the as-prepared films from 58 to 125 nm. Films annealed at temperatures higher than 423 K showed a decrease in Eo. The electrical conductivity of the as-prepared and annealed films was measured in the temperature range 80–300 K. An amorphous-crystalline transformation was observed after annealing at temperatures higher than 423 K. The results obtained are discussed on the basis of amorphous-crystalline transformations