Thin films of In0.10Se90 of thickness 200 Å are prepared by vacuum evaporation. The optical gaps (Eoptg) and the high-frequency dielectric constant (ɛɛ∞) are determined from the absorption spectrum of the In0.10Se0.90 films heat-treated at different temperatures. The effect of the temperature of heat treatment on the optical gap (Eoptg) and the high-frequency dielectric constant (ɛɛ∞) of the films is interpreted in terms of the density of state model of Mott and Davis and explained as being due to the saturation of bonds in the amorphous solid. It is shown that in the case of In0.10Se0.90 a transition from the amorphous to the crystalline state takes place at 373 K. The structural analysis of In0.10Se0.90 films by using XRD is reported.

The optical absorption of as-prepared and thermally annealed As24.5Te71Cd4.5 thin films was measured. The optical energy gap Eo increased from 0.58 to 0.85 eV with increasing thickness of the as-prepared films from 58 to 125 nm. Films annealed at temperatures higher than 423 K showed a decrease in Eo. The electrical conductivity of the as-prepared and annealed films was measured in the temperature range 80–300 K. An amorphous-crystalline transformation was observed after annealing at temperatures higher than 423 K. The results obtained are discussed on the basis of amorphous-crystalline transformations

The optical absorption of as-prepared and thermally annealed As24.5Te71Cd4.5 thin films was measured. The optical energy gap Eo increased from 0.58 to 0.85 eV with increasing thickness of the as-prepared films from 58 to 125 nm. Films annealed at temperatures higher than 423 K showed a decrease in Eo. The electrical conductivity of the as-prepared and annealed films was measured in the temperature range 80–300 K. An amorphous-crystalline transformation was observed after annealing at temperatures higher than 423 K. The results obtained are discussed on the basis of amorphous-crystalline transformations

The optical absorption of as-prepared and thermally annealed As24.5Te71Cd4.5 thin films was measured. The optical energy gap Eo increased from 0.58 to 0.85 eV with increasing thickness of the as-prepared films from 58 to 125 nm. Films annealed at temperatures higher than 423 K showed a decrease in Eo. The electrical conductivity of the as-prepared and annealed films was measured in the temperature range 80–300 K. An amorphous-crystalline transformation was observed after annealing at temperatures higher than 423 K. The results obtained are discussed on the basis of amorphous-crystalline transformations

The optical absorption of as-prepared and thermally annealed As24.5Te71Cd4.5 thin films was measured. The optical energy gap Eo increased from 0.58 to 0.85 eV with increasing thickness of the as-prepared films from 58 to 125 nm. Films annealed at temperatures higher than 423 K showed a decrease in Eo. The electrical conductivity of the as-prepared and annealed films was measured in the temperature range 80–300 K. An amorphous-crystalline transformation was observed after annealing at temperatures higher than 423 K. The results obtained are discussed on the basis of amorphous-crystalline transformations

Electrical resistivity and optical absorption of amorphous As2Te3:Ag co-evaporated films are investigated as a function of the Ag content up to 25 at%. The film resistivity decreased from 2.1 × 104 to 2.6 × 102 ω cm and the activation energy for conduction decreased from 0.45 to 0.36 eV with increasing the film Ag content. The dependence of the optical absorption coefficient on the photon energy is ascribed by the relation (αhv) = B(hv − E0)2. The optical gap E0 of the as-prepared films decreases with increasing Ag content. The tail width of the localized states at the band gap was calculated and it increases with increasing the Ag content. The effect of the thermal annealing on the optical absorption was investigated. The changes were attributed to the thermally induced transformations in the chalcogenide films

Electrical resistivity and optical absorption of amorphous As2Te3:Ag co-evaporated films are investigated as a function of the Ag content up to 25 at%. The film resistivity decreased from 2.1 × 104 to 2.6 × 102 ω cm and the activation energy for conduction decreased from 0.45 to 0.36 eV with increasing the film Ag content. The dependence of the optical absorption coefficient on the photon energy is ascribed by the relation (αhv) = B(hv − E0)2. The optical gap E0 of the as-prepared films decreases with increasing Ag content. The tail width of the localized states at the band gap was calculated and it increases with increasing the Ag content. The effect of the thermal annealing on the optical absorption was investigated. The changes were attributed to the thermally induced transformations in the chalcogenide films

Electrical resistivity and optical absorption of amorphous As2Te3:Ag co-evaporated films are investigated as a function of the Ag content up to 25 at%. The film resistivity decreased from 2.1 × 104 to 2.6 × 102 ω cm and the activation energy for conduction decreased from 0.45 to 0.36 eV with increasing the film Ag content. The dependence of the optical absorption coefficient on the photon energy is ascribed by the relation (αhv) = B(hv − E0)2. The optical gap E0 of the as-prepared films decreases with increasing Ag content. The tail width of the localized states at the band gap was calculated and it increases with increasing the Ag content. The effect of the thermal annealing on the optical absorption was investigated. The changes were attributed to the thermally induced transformations in the chalcogenide films