This work reports the air-annealing effect on the structure, optical and electrical properties of tin sulfides (SnS) thin films and the capability of using these films for gas sensing application. The X-ray diffraction investigation shows that the predominant phase SnS (040) plane for the as-deposited film changes into Sn2S3 (201) plane after annealing. Furthermore, the annealed films at high temperatures (533 and 553 K) are partially oxidized leading to the formation of mixed tin sulfide oxides-Sn2S3 (MTO-Sn2S3) heterostructure thin film. The optical constants and thickness of films are calculated using Swanpole's method. Both optical band gap and electrical activation energy increased after annealing in the range (493–553 K) for 0.5 h in ambient air. Optical and electrical results indicate the existence of mixed phase characteristics of studied films. The gas sensing properties of MTO-Sn2S3 composite are investigated for methane gas detection. The fabricated sensor exhibits a weak sensitivity at low operating temperatures (50 and 100 °C). The sensitivity improves at high temperatures reaching its maximum at 250 °C. At 250 °C the response and recovery times are 250 and 82 s, respectively. Do you want to read the rest of this article? Thermal annealing of SnS thin film induced mixed tin sulfide oxides-Sn2S3 for gas... | Request PDF. Available from: https://www.researchgate.net/publication/322194937_Thermal_annealing_of_SnS_thin_film_induced_mixed_tin_sulfide_oxides-Sn2S3_for_gas_sensing_Optical_and_electrical_properties [accessed Feb 13 2018].

Calorimetric measurements of chalcogenide Se95−xSb5Inx (x = 0, 6, 8 and 10 at%) alloys are carried out using differential thermal analysis (DTA). The glass forming ability and glass transition are analyzed based on the heating rate dependence. The ability to form crystals is found to be increased with increasing In content indicating the suitably for the anticipated storage. Both the glass transition temperature and the glass transition activation energy increase with increasing In content. The crystallization due to the addition of In to the Se–Sb system is investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM). The crystallization process is described by two models. These are Johnson–Mehl–Avrami (JMA) model and the empirical Sestak–Berggren (SB) model using an iso-conversional method of the transformation rate. The activation energy of crystallization is found to be increased with increasing In content. Based on the evaluated values of Avrami exponent (n), the crystallization growth is not dimensionally the same for the compositions. Do you want to read the rest of this article? Thermal stability, glass transition and crystallization kinetics of Se95−xSb5Inx... | Request PDF. Available from: https://www.researchgate.net/publication/322749528_Thermal_stability_glass_transition_and_crystallization_kinetics_of_Se95-xSb5Inx_chalcogenide [accessed Feb 13 2018].

Calorimetric measurements of chalcogenide Se95−xSb5Inx (x = 0, 6, 8 and 10 at%) alloys are carried out using differential thermal analysis (DTA). The glass forming ability and glass transition are analyzed based on the heating rate dependence. The ability to form crystals is found to be increased with increasing In content indicating the suitably for the anticipated storage. Both the glass transition temperature and the glass transition activation energy increase with increasing In content. The crystallization due to the addition of In to the Se–Sb system is investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM). The crystallization process is described by two models. These are Johnson–Mehl–Avrami (JMA) model and the empirical Sestak–Berggren (SB) model using an iso-conversional method of the transformation rate. The activation energy of crystallization is found to be increased with increasing In content. Based on the evaluated values of Avrami exponent (n), the crystallization growth is not dimensionally the same for the compositions. Do you want to read the rest of this article? Thermal stability, glass transition and crystallization kinetics of Se95−xSb5Inx... | Request PDF. Available from: https://www.researchgate.net/publication/322749528_Thermal_stability_glass_transition_and_crystallization_kinetics_of_Se95-xSb5Inx_chalcogenide [accessed Feb 13 2018].

Calorimetric measurements of chalcogenide Se95−xSb5Inx (x = 0, 6, 8 and 10 at%) alloys are carried out using differential thermal analysis (DTA). The glass forming ability and glass transition are analyzed based on the heating rate dependence. The ability to form crystals is found to be increased with increasing In content indicating the suitably for the anticipated storage. Both the glass transition temperature and the glass transition activation energy increase with increasing In content. The crystallization due to the addition of In to the Se–Sb system is investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM). The crystallization process is described by two models. These are Johnson–Mehl–Avrami (JMA) model and the empirical Sestak–Berggren (SB) model using an iso-conversional method of the transformation rate. The activation energy of crystallization is found to be increased with increasing In content. Based on the evaluated values of Avrami exponent (n), the crystallization growth is not dimensionally the same for the compositions. Do you want to read the rest of this article? Thermal stability, glass transition and crystallization kinetics of Se95−xSb5Inx... | Request PDF. Available from: https://www.researchgate.net/publication/322749528_Thermal_stability_glass_transition_and_crystallization_kinetics_of_Se95-xSb5Inx_chalcogenide [accessed Feb 13 2018].

Chalcogenide-alkali metal semiconducting thin films of four different thicknesses of Se80Te8(NaCl)12 are deposited from bulk by thermal evaporation technique. The crystallinity of the film improves with increasing of thickness as indicated by the recorded X-ray diffraction patterns. The transmission and reflection spectra are measured in the wavelength range of the incident photons from 250 to 2500 nm. The thickness and optical constants of the films are calculated based on Swanepeol method using the interference patterns appeared in the transmission spectra. It is found that the films have absorption mechanism which is an indirect allowed transition. The effect of the film thickness on the refractive index and the high-frequency dielectric constant are studied. With increasing the film thickness, both the absorption coefficient and high-frequency dielectric constant increase while the single-oscillator energy, optical band gap and extinction coefficient decrease. Thickness and optical constants calculation for chalcogenide-alkali metal Se 80... | Request PDF. Available from: https://www.researchgate.net/publication/316817569_Thickness_and_optical_constants_calculation_for_chalcogenide-alkali_metal_Se_80_Te_8_NaCl_12_thin_film [accessed Feb 13 2018].

Chalcogenide-alkali metal semiconducting thin films of four different thicknesses of Se80Te8(NaCl)12 are deposited from bulk by thermal evaporation technique. The crystallinity of the film improves with increasing of thickness as indicated by the recorded X-ray diffraction patterns. The transmission and reflection spectra are measured in the wavelength range of the incident photons from 250 to 2500 nm. The thickness and optical constants of the films are calculated based on Swanepeol method using the interference patterns appeared in the transmission spectra. It is found that the films have absorption mechanism which is an indirect allowed transition. The effect of the film thickness on the refractive index and the high-frequency dielectric constant are studied. With increasing the film thickness, both the absorption coefficient and high-frequency dielectric constant increase while the single-oscillator energy, optical band gap and extinction coefficient decrease. Thickness and optical constants calculation for chalcogenide-alkali metal Se 80... | Request PDF. Available from: https://www.researchgate.net/publication/316817569_Thickness_and_optical_constants_calculation_for_chalcogenide-alkali_metal_Se_80_Te_8_NaCl_12_thin_film [accessed Feb 13 2018].

Chalcogenide-alkali metal semiconducting thin films of four different thicknesses of Se80Te8(NaCl)12 are deposited from bulk by thermal evaporation technique. The crystallinity of the film improves with increasing of thickness as indicated by the recorded X-ray diffraction patterns. The transmission and reflection spectra are measured in the wavelength range of the incident photons from 250 to 2500 nm. The thickness and optical constants of the films are calculated based on Swanepeol method using the interference patterns appeared in the transmission spectra. It is found that the films have absorption mechanism which is an indirect allowed transition. The effect of the film thickness on the refractive index and the high-frequency dielectric constant are studied. With increasing the film thickness, both the absorption coefficient and high-frequency dielectric constant increase while the single-oscillator energy, optical band gap and extinction coefficient decrease. Thickness and optical constants calculation for chalcogenide-alkali metal Se 80... | Request PDF. Available from: https://www.researchgate.net/publication/316817569_Thickness_and_optical_constants_calculation_for_chalcogenide-alkali_metal_Se_80_Te_8_NaCl_12_thin_film [accessed Feb 13 2018].

Chalcogenide-alkali metal semiconducting thin films of four different thicknesses of Se80Te8(NaCl)12 are deposited from bulk by thermal evaporation technique. The crystallinity of the film improves with increasing of thickness as indicated by the recorded X-ray diffraction patterns. The transmission and reflection spectra are measured in the wavelength range of the incident photons from 250 to 2500 nm. The thickness and optical constants of the films are calculated based on Swanepeol method using the interference patterns appeared in the transmission spectra. It is found that the films have absorption mechanism which is an indirect allowed transition. The effect of the film thickness on the refractive index and the high-frequency dielectric constant are studied. With increasing the film thickness, both the absorption coefficient and high-frequency dielectric constant increase while the single-oscillator energy, optical band gap and extinction coefficient decrease. Thickness and optical constants calculation for chalcogenide-alkali metal Se 80... | Request PDF. Available from: https://www.researchgate.net/publication/316817569_Thickness_and_optical_constants_calculation_for_chalcogenide-alkali_metal_Se_80_Te_8_NaCl_12_thin_film [accessed Feb 13 2018].

This study intended to determine the ability of endophytic bacteria recovered from root nodules of Cicer arietinum L. and Vigna unguiculata L. (Walp.) plants to synthesize exopolysaccharide (EPS) and to enhance the production by changing nutritional factors. Twenty endophytic bacteria isolated from root nodules of Cicer arietinum and Vigna unguiculata were tested for their production of EPS. High EPS-producing isolates were identified on phenotypic and genotypic characteristics. Among 20 isolates, Stenotrophomonas maltophilia (C6) and Brevibacillus parabrevis (V4) isolated from root nodules of Cicer arietinum and Vigna unguiculata produced a high EPS yield in comparison with other isolates. Using 1% of sucrose as sole carbon source increases the concentration of EPS produced by S. maltophilia and B. parabrevis (65 and 107%, respectively). EPS produced by S. maltophilia and B. parabrevis was increased by the addition of fructose and lactose (0.1%). Addition of 1.68 g/L KNO3 or 2.49 g/L glycine to modified yeast extract mannitol medium (YEMB) significantly increased EPS production by S. maltophilia and B. parabrevis. Furthermore, the presence of Fe3O4 nanoparticles (25–50 μg/ mL) in the modified YEMB medium increased EPS yield by B. parabrevis. Chemical characterization of EPS by GC–MS and FTIR indicate that the EPS biochemical composition is dependent on the bioavailability of carbon substrates and is controlled by limiting nutrients. The combination of the best two carbon sources sucrose (0.9%) and fructose or lactose (0.1%) in the presence of KNO3 or glycine as the best nitrogen sources significantly increased EPS yield of S. maltophilia and B. parabrevis, respectively.

This study intended to determine the ability of endophytic bacteria recovered from root nodules of Cicer arietinum L. and Vigna unguiculata L. (Walp.) plants to synthesize exopolysaccharide (EPS) and to enhance the production by changing nutritional factors. Twenty endophytic bacteria isolated from root nodules of Cicer arietinum and Vigna unguiculata were tested for their production of EPS. High EPS-producing isolates were identified on phenotypic and genotypic characteristics. Among 20 isolates, Stenotrophomonas maltophilia (C6) and Brevibacillus parabrevis (V4) isolated from root nodules of Cicer arietinum and Vigna unguiculata produced a high EPS yield in comparison with other isolates. Using 1% of sucrose as sole carbon source increases the concentration of EPS produced by S. maltophilia and B. parabrevis (65 and 107%, respectively). EPS produced by S. maltophilia and B. parabrevis was increased by the addition of fructose and lactose (0.1%). Addition of 1.68 g/L KNO3 or 2.49 g/L glycine to modified yeast extract mannitol medium (YEMB) significantly increased EPS production by S. maltophilia and B. parabrevis. Furthermore, the presence of Fe3O4 nanoparticles (25–50 μg/ mL) in the modified YEMB medium increased EPS yield by B. parabrevis. Chemical characterization of EPS by GC–MS and FTIR indicate that the EPS biochemical composition is dependent on the bioavailability of carbon substrates and is controlled by limiting nutrients. The combination of the best two carbon sources sucrose (0.9%) and fructose or lactose (0.1%) in the presence of KNO3 or glycine as the best nitrogen sources significantly increased EPS yield of S. maltophilia and B. parabrevis, respectively.