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Chalcogenide Te40Se30S30 thin films of different thickness (100–450 nm) are prepared by thermal evaporation of the Te40Se30S30 bulk. X-ray examination of the film shows some prominent peaks relate to crystalline phases indicating the crystallization process. The calculated particles of crystals from the X-ray diffraction peaks are found to be from 11 to 26 nm. As the thickness increases, the transmittance decreases and the reflectance increases. This could be attributed to the increment of the absorption of photons as more states will be available for absorbance in the case of thicker films. The decrease in the direct band gap with thickness is accompanied with an increase in energy of localized states. The obtained data for the refractive index could be fit to the dispersion model based on the single oscillator equation. The single-oscillator energy decreases, while the dispersion energy increases as the thickness increases.

Chalcogenide Te40Se30S30 thin films of different thickness (100–450 nm) are prepared by thermal evaporation of the Te40Se30S30 bulk. X-ray examination of the film shows some prominent peaks relate to crystalline phases indicating the crystallization process. The calculated particles of crystals from the X-ray diffraction peaks are found to be from 11 to 26 nm. As the thickness increases, the transmittance decreases and the reflectance increases. This could be attributed to the increment of the absorption of photons as more states will be available for absorbance in the case of thicker films. The decrease in the direct band gap with thickness is accompanied with an increase in energy of localized states. The obtained data for the refractive index could be fit to the dispersion model based on the single oscillator equation. The single-oscillator energy decreases, while the dispersion energy increases as the thickness increases.

Chalcogenide Te40Se30S30 thin films of different thickness (100–450 nm) are prepared by thermal evaporation of the Te40Se30S30 bulk. X-ray examination of the film shows some prominent peaks relate to crystalline phases indicating the crystallization process. The calculated particles of crystals from the X-ray diffraction peaks are found to be from 11 to 26 nm. As the thickness increases, the transmittance decreases and the reflectance increases. This could be attributed to the increment of the absorption of photons as more states will be available for absorbance in the case of thicker films. The decrease in the direct band gap with thickness is accompanied with an increase in energy of localized states. The obtained data for the refractive index could be fit to the dispersion model based on the single oscillator equation. The single-oscillator energy decreases, while the dispersion energy increases as the thickness increases.

Amorphous chalcogenide Ge20Se76Sn4 thin films of six different thicknesses (50–350 nm) are prepared by the thermal evaporation technique. Optical transmission and reflection spectra, in the wavelength range of the incident photons from 250 to 2500 nm, are used to study the effect of the film thickness on some optical properties. It is found that the effect of film thickness leads to increase in the absorption coefficient, refractive index, extinction coefficient and the width of the tails of localized states in the gap region. The decrease in optical band gap energy with increasing the film thickness is attributed to the formation of a band tail which narrows down the band gap. Dispersion analyses of refractive index reveal a decrease in the single-oscillator energy and an increase in the dispersion energy with increase in film thickness.

Amorphous chalcogenide Ge20Se76Sn4 thin films of six different thicknesses (50–350 nm) are prepared by the thermal evaporation technique. Optical transmission and reflection spectra, in the wavelength range of the incident photons from 250 to 2500 nm, are used to study the effect of the film thickness on some optical properties. It is found that the effect of film thickness leads to increase in the absorption coefficient, refractive index, extinction coefficient and the width of the tails of localized states in the gap region. The decrease in optical band gap energy with increasing the film thickness is attributed to the formation of a band tail which narrows down the band gap. Dispersion analyses of refractive index reveal a decrease in the single-oscillator energy and an increase in the dispersion energy with increase in film thickness.

Amorphous chalcogenide Ge20Se76Sn4 thin films of six different thicknesses (50–350 nm) are prepared by the thermal evaporation technique. Optical transmission and reflection spectra, in the wavelength range of the incident photons from 250 to 2500 nm, are used to study the effect of the film thickness on some optical properties. It is found that the effect of film thickness leads to increase in the absorption coefficient, refractive index, extinction coefficient and the width of the tails of localized states in the gap region. The decrease in optical band gap energy with increasing the film thickness is attributed to the formation of a band tail which narrows down the band gap. Dispersion analyses of refractive index reveal a decrease in the single-oscillator energy and an increase in the dispersion energy with increase in film thickness.

Amorphous chalcogenide Ge20Se76Sn4 thin films of six different thicknesses (50–350 nm) are prepared by the thermal evaporation technique. Optical transmission and reflection spectra, in the wavelength range of the incident photons from 250 to 2500 nm, are used to study the effect of the film thickness on some optical properties. It is found that the effect of film thickness leads to increase in the absorption coefficient, refractive index, extinction coefficient and the width of the tails of localized states in the gap region. The decrease in optical band gap energy with increasing the film thickness is attributed to the formation of a band tail which narrows down the band gap. Dispersion analyses of refractive index reveal a decrease in the single-oscillator energy and an increase in the dispersion energy with increase in film thickness.

A series of ZrO2/c-Al2O3 catalysts were prepared by incipient wetness impregnation of zirconyl nitrate hydrate aqueous solutions on nano-c-Al2O3 with ZrO2 loadings (1–30 % w/w) and calcined at 450 and 550 C for 3 h in a static air atmosphere. Physicochemical properties of the catalysts were determined using TG, DTA, XRD, FT-IR, Raman spectroscopy, TEM, and N2 sorption measurements. The surface acidity of the catalysts was investigated by dehydration of isopropanol and adsorption of pyridine, 2,6-dimethyl pyridine and TPD–pyridine. This series of catalysts was used for vapor-phase dehydration of methanol to dimethyl ether in a fixed bed reactor. It was found that all catalysts in this study were active and selective for DME synthesis. According to the experimental results, 1 % ZA catalyst exhibited the highest activity with selectivity of 100 % toward DME.

A series of ZrO2/c-Al2O3 catalysts were prepared by incipient wetness impregnation of zirconyl nitrate hydrate aqueous solutions on nano-c-Al2O3 with ZrO2 loadings (1–30 % w/w) and calcined at 450 and 550 C for 3 h in a static air atmosphere. Physicochemical properties of the catalysts were determined using TG, DTA, XRD, FT-IR, Raman spectroscopy, TEM, and N2 sorption measurements. The surface acidity of the catalysts was investigated by dehydration of isopropanol and adsorption of pyridine, 2,6-dimethyl pyridine and TPD–pyridine. This series of catalysts was used for vapor-phase dehydration of methanol to dimethyl ether in a fixed bed reactor. It was found that all catalysts in this study were active and selective for DME synthesis. According to the experimental results, 1 % ZA catalyst exhibited the highest activity with selectivity of 100 % toward DME.