Differential scanning calorimetry results under non-isothermal conditions of the chalcogenide Se80-xTe20Sbx (x=1.5,7.5, and 9 at%) glasses are reported and discussed. The models, used for calculating the crystallization kinetics from the exothermic peaks, have been applied to obtain the pre-crystalliation kinetics from the endothermic peaks. Increasing Sb content was found to increase the astivation energy of glass transition.

Differential scanning calorimetry results under non-isothermal conditions of the chalcogenide Se80-xTe20Sbx (x=1.5,7.5, and 9 at%) glasses are reported and discussed. The models, used for calculating the crystallization kinetics from the exothermic peaks, have been applied to obtain the pre-crystalliation kinetics from the endothermic peaks. Increasing Sb content was found to increase the astivation energy of glass transition.

Differential scanning calorimetry results under non-isothermal conditions of the chalcogenide Se80-xTe20Sbx (x=1.5,7.5, and 9 at%) glasses are reported and discussed. The models, used for calculating the crystallization kinetics from the exothermic peaks, have been applied to obtain the pre-crystalliation kinetics from the endothermic peaks. Increasing Sb content was found to increase the astivation energy of glass transition.

Differential scanning calorimetry results under non-isothermal conditions of the chalcogenide Se80-xTe20Sbx (x=1.5,7.5, and 9 at%) glasses are reported and discussed. The models, used for calculating the crystallization kinetics from the exothermic peaks, have been applied to obtain the pre-crystalliation kinetics from the endothermic peaks. Increasing Sb content was found to increase the astivation energy of glass transition.

The effect of ambient temperature and copper content on the switching characteristics of the system exhibits non-linear I-V characteristics and switching phenomena. The switching characteristics could be classified as current-controlled negative resistance (CCNR) devices. the threshold voltage was found to decrease exponentially with increasing transformation. The existance of a low-resistivity state may be attributed to the formation of crystallind phases acting as conduction paths between the two electrodes.

The effect of ambient temperature and copper content on the switching characteristics of the system exhibits non-linear I-V characteristics and switching phenomena. The switching characteristics could be classified as current-controlled negative resistance (CCNR) devices. the threshold voltage was found to decrease exponentially with increasing transformation. The existance of a low-resistivity state may be attributed to the formation of crystallind phases acting as conduction paths between the two electrodes.