The optical absorption of as-prepared and thermally annealed As24.5Te71Cd4.5 thin films was measured. The optical energy gap Eo increased from 0.58 to 0.85 eV with increasing thickness of the as-prepared films from 58 to 125 nm. Films annealed at temperatures higher than 423 K showed a decrease in Eo. The electrical conductivity of the as-prepared and annealed films was measured in the temperature range 80–300 K. An amorphous-crystalline transformation was observed after annealing at temperatures higher than 423 K. The results obtained are discussed on the basis of amorphous-crystalline transformations

The optical absorption of as-prepared and thermally annealed As24.5Te71Cd4.5 thin films was measured. The optical energy gap Eo increased from 0.58 to 0.85 eV with increasing thickness of the as-prepared films from 58 to 125 nm. Films annealed at temperatures higher than 423 K showed a decrease in Eo. The electrical conductivity of the as-prepared and annealed films was measured in the temperature range 80–300 K. An amorphous-crystalline transformation was observed after annealing at temperatures higher than 423 K. The results obtained are discussed on the basis of amorphous-crystalline transformations

Electrical resistivity and optical absorption of amorphous As2Te3:Ag co-evaporated films are investigated as a function of the Ag content up to 25 at%. The film resistivity decreased from 2.1 × 104 to 2.6 × 102 ω cm and the activation energy for conduction decreased from 0.45 to 0.36 eV with increasing the film Ag content. The dependence of the optical absorption coefficient on the photon energy is ascribed by the relation (αhv) = B(hv − E0)2. The optical gap E0 of the as-prepared films decreases with increasing Ag content. The tail width of the localized states at the band gap was calculated and it increases with increasing the Ag content. The effect of the thermal annealing on the optical absorption was investigated. The changes were attributed to the thermally induced transformations in the chalcogenide films

Electrical resistivity and optical absorption of amorphous As2Te3:Ag co-evaporated films are investigated as a function of the Ag content up to 25 at%. The film resistivity decreased from 2.1 × 104 to 2.6 × 102 ω cm and the activation energy for conduction decreased from 0.45 to 0.36 eV with increasing the film Ag content. The dependence of the optical absorption coefficient on the photon energy is ascribed by the relation (αhv) = B(hv − E0)2. The optical gap E0 of the as-prepared films decreases with increasing Ag content. The tail width of the localized states at the band gap was calculated and it increases with increasing the Ag content. The effect of the thermal annealing on the optical absorption was investigated. The changes were attributed to the thermally induced transformations in the chalcogenide films

Electrical resistivity and optical absorption of amorphous As2Te3:Ag co-evaporated films are investigated as a function of the Ag content up to 25 at%. The film resistivity decreased from 2.1 × 104 to 2.6 × 102 ω cm and the activation energy for conduction decreased from 0.45 to 0.36 eV with increasing the film Ag content. The dependence of the optical absorption coefficient on the photon energy is ascribed by the relation (αhv) = B(hv − E0)2. The optical gap E0 of the as-prepared films decreases with increasing Ag content. The tail width of the localized states at the band gap was calculated and it increases with increasing the Ag content. The effect of the thermal annealing on the optical absorption was investigated. The changes were attributed to the thermally induced transformations in the chalcogenide films

Optical absorption at room temperature and electrical resistivity at temperatures between 200 and 320 K for (As.Te)1-xSex thin films (where x=0.20, 0.23, 0.27, 0.32 and 0.44) have been studied. Increasing the Se content was found to increase the optical energy gap and the activation energy for conduction of the investigated films. The optical energy gap of the As0.40Te0.40Se0.20 films was increased up to 1.21 eV by increasing the film thickness to 120 nm, while thermal annealing at 480 K reduced it down to 0.83 eV. The decrease of the optical gap is discussed on the basis of amorphous-crystalline transformations.

Optical absorption at room temperature and electrical resistivity at temperatures between 200 and 320 K for (As.Te)1-xSex thin films (where x=0.20, 0.23, 0.27, 0.32 and 0.44) have been studied. Increasing the Se content was found to increase the optical energy gap and the activation energy for conduction of the investigated films. The optical energy gap of the As0.40Te0.40Se0.20 films was increased up to 1.21 eV by increasing the film thickness to 120 nm, while thermal annealing at 480 K reduced it down to 0.83 eV. The decrease of the optical gap is discussed on the basis of amorphous-crystalline transformations.

Optical absorption at room temperature and electrical resistivity at temperatures between 200 and 320 K for (As.Te)1-xSex thin films (where x=0.20, 0.23, 0.27, 0.32 and 0.44) have been studied. Increasing the Se content was found to increase the optical energy gap and the activation energy for conduction of the investigated films. The optical energy gap of the As0.40Te0.40Se0.20 films was increased up to 1.21 eV by increasing the film thickness to 120 nm, while thermal annealing at 480 K reduced it down to 0.83 eV. The decrease of the optical gap is discussed on the basis of amorphous-crystalline transformations.

Glassy As45.2Te46.6In8.2 thin films were thermally evaporated onto chemically cleaned glass substrates. Crystallization kinetics were determined under isothermal conditions. Heating the film up to the isothermal temperature with different rates was found to yield films with different electrical characterization. Conductivity of the investigated film was used as a parameter indicating the crystallized fraction χ(t). The obtained values of the activation energy for crystallization, the frequency factor and the Avrami index are (100±0.5) kJ/mol, (7.31±0.04) 108 s−1 and 1.45, respectively. The non-integer value of the Avrami index indicates that two crystallization mechanisms are responsible for the crystal growth

Glassy As45.2Te46.6In8.2 thin films were thermally evaporated onto chemically cleaned glass substrates. Crystallization kinetics were determined under isothermal conditions. Heating the film up to the isothermal temperature with different rates was found to yield films with different electrical characterization. Conductivity of the investigated film was used as a parameter indicating the crystallized fraction χ(t). The obtained values of the activation energy for crystallization, the frequency factor and the Avrami index are (100±0.5) kJ/mol, (7.31±0.04) 108 s−1 and 1.45, respectively. The non-integer value of the Avrami index indicates that two crystallization mechanisms are responsible for the crystal growth