B-field characterization and equivalent circuit modeling of a poly-SiGe-MEMS based Xylophone Bar Magnetometer
Research Abstract
This paper reports a quantitative characterization of a poly-SiGe MEMS-based Xylophone Bar Magnetometer (XBM), thereby following a novel characterization method that is based on the measurement of the forward/backward transmission gains S 21 /S 21 of the XBM treated as a two-port network. More specifically, this was done through monitoring the absolute amplitude of the resonant peaks of S 21 and S 12 with changing magnetic induction B. Also, we present for the first time a novel equivalent circuit for the two-port XBM, modeling effectively the electro-magneto-mechanical behavior of the magnetometer. The experimental measurements showed that poly-SiGe XBM is capable of being a linear magnetic sensor in mT range with a sensitivity 0.1dB=mT with an excitation power 5dBm fed to the electrodynamic/electrostatic port and a biasing voltage 14V applied through the sense/drive capacitor.
Research Department
Research Journal
2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
Research Member
Research Pages
1-6
Research Publisher
IEEE
Research Rank
3
Research Vol
NULL
Research Website
https://ieeexplore.ieee.org/abstract/document/6813838/
Research Year
2014