Results on the thermal analysis, switching characteristics and effect of heat treatment on the structure and electrical resistivity of the chalcogenide glass As25Si45Te30 are reported and discussed. From the dependence of the crystallization peak temperatures, Tp, on the heating rate, the crystallization activation energies were evaluated. For the investigated composition, the most probable mechanisms for the two crystallization phases are three- and one-dimensional crystal growth. Transformation from the glassy structure to the crystalline phase was responsible for the decrease in room-temperature resistivity and activation energy for conduction with increase of the annealing temperature

Results on the thermal analysis, switching characteristics and effect of heat treatment on the structure and electrical resistivity of the chalcogenide glass As25Si45Te30 are reported and discussed. From the dependence of the crystallization peak temperatures, Tp, on the heating rate, the crystallization activation energies were evaluated. For the investigated composition, the most probable mechanisms for the two crystallization phases are three- and one-dimensional crystal growth. Transformation from the glassy structure to the crystalline phase was responsible for the decrease in room-temperature resistivity and activation energy for conduction with increase of the annealing temperature

Results on the thermal analysis, switching characteristics and effect of heat treatment on the structure and electrical resistivity of the chalcogenide glass As25Si45Te30 are reported and discussed. From the dependence of the crystallization peak temperatures, Tp, on the heating rate, the crystallization activation energies were evaluated. For the investigated composition, the most probable mechanisms for the two crystallization phases are three- and one-dimensional crystal growth. Transformation from the glassy structure to the crystalline phase was responsible for the decrease in room-temperature resistivity and activation energy for conduction with increase of the annealing temperature

Optical absorption measurements have been made on As46Te46Ge8 amorphous films with thickness 85-125 nm. The measurements were carried on as-prepared and annealed specimens. The mechanism of the optical absorption follows the rule of non-direct transition. The optical energy gap (E0) increases with increasing the annealing temperature up to 473 K, followed by a sharp decrease with increasing the annealing temperature above the glass transition temperature. Electrical conductivity was measured in the temperature range 80-300 K. The effect of heat treatment on the activation energy (ΔE) for conduction and the density of localized states at the Fermi level N(EF) was studied. The electrical measurements show annealing-dependent conductivity and exhibit two types of conduction channels that contribute two conduction mechanisms. Transmission electron microscope (TEM) investigation indicates the separation of crystalline phases after annealing at temperatures higher than 473 K. The results were discussed on the basis of amorphous crystalline transformation

Optical absorption measurements have been made on As46Te46Ge8 amorphous films with thickness 85-125 nm. The measurements were carried on as-prepared and annealed specimens. The mechanism of the optical absorption follows the rule of non-direct transition. The optical energy gap (E0) increases with increasing the annealing temperature up to 473 K, followed by a sharp decrease with increasing the annealing temperature above the glass transition temperature. Electrical conductivity was measured in the temperature range 80-300 K. The effect of heat treatment on the activation energy (ΔE) for conduction and the density of localized states at the Fermi level N(EF) was studied. The electrical measurements show annealing-dependent conductivity and exhibit two types of conduction channels that contribute two conduction mechanisms. Transmission electron microscope (TEM) investigation indicates the separation of crystalline phases after annealing at temperatures higher than 473 K. The results were discussed on the basis of amorphous crystalline transformation

Optical absorption measurements have been made on As46Te46Ge8 amorphous films with thickness 85-125 nm. The measurements were carried on as-prepared and annealed specimens. The mechanism of the optical absorption follows the rule of non-direct transition. The optical energy gap (E0) increases with increasing the annealing temperature up to 473 K, followed by a sharp decrease with increasing the annealing temperature above the glass transition temperature. Electrical conductivity was measured in the temperature range 80-300 K. The effect of heat treatment on the activation energy (ΔE) for conduction and the density of localized states at the Fermi level N(EF) was studied. The electrical measurements show annealing-dependent conductivity and exhibit two types of conduction channels that contribute two conduction mechanisms. Transmission electron microscope (TEM) investigation indicates the separation of crystalline phases after annealing at temperatures higher than 473 K. The results were discussed on the basis of amorphous crystalline transformation