
On behalf of the College Administration and all its members, Prof. Dr. Khaled Salah, Dean of the College, extends his sincere congratulations to Mr. Raafat Bakr on the occasion of the issuance of the decision by Prof. Dr. Mohamed Ayman Ashour, Minister of Higher Education and Scientific Research, appointing him as Secretary-General of the College, wishing him success in serving the College and the renaissance of its administrative apparatus.
The Department of Electrical Engineering at the college announces seminars on Thursday, June 19, 2025... at the HP Lab in the Department of Electrical Engineering.
On the occasion of Eid al-Adha, and on behalf of the college administration, Prof. Dr. Khaled Salah, Dean of the College, extends his sincere congratulations and blessings to all members of the college, including faculty members, support staff, administrative staff, and students, on the occasion of Eid al-Adha. May God bring it back to everyone with all goodness and blessings for many years and long times.
On behalf of the College Administration and all its members, Professor Dr. Khaled Salah, Dean of the College, extends his sincere congratulations to Professor Dr. Mohamed Safwat Abu Reya on the occasion of the issuance of the decision by His Excellency Professor Dr. Ahmed El-Minshawy, President of the University, appointing him as Vice Dean for Education and Student Affairs. We wish him all the best and prosperity.
Training Program Schedule for June 2025
(Digital transformation courses for promotion to assistant professor and lecturer)
Note: Exams must be attended at the center.
This paper investigates the performance of vacuum gate dielectric doping-free carbon nanotube/nanoribbon field-effect transistors (VGD-DL CNT/GNRFETs) via computational analysis employing a quantum simulation approach. The methodology integrates the self-consistent solution of the Poisson solver with the mode space non-equilibrium Green’s function (NEGF) in the ballistic limit. Adopting the vacuum gate dielectric (VGD) paradigm ensures radiation-hardened functionality while avoiding radiation-induced trapped charge mechanisms, while the doping-free paradigm facilitates fabrication flexibility by avoiding the realization of a sharp doping gradient in the nanoscale regime. Electrostatic doping of the nanodevices is achieved via source and drain doping gates. The simulations encompass MOSFET and tunnel FET (TFET) modes. The numerical investigation comprehensively examines potential distribution, transfer characteristics, subthreshold swing, leakage current, on-state current, current ratio, and scaling capability. Results demonstrate the robustness of vacuum nanodevices for high-performance, radiation-hardened switching applications. Furthermore, a proposal for extrinsic enhancement via doping gate voltage adjustment to optimize band diagrams and improve switching performance at ultra-scaled regimes is successfully presented. These findings underscore the potential of vacuum gate dielectric carbon-based nanotransistors for ultrascaled, high-performance, energy-efficient, and radiation-immune nanoelectronics.