Erratum to ``Annealing dependence of optical properties of Ga20S75Sb5 and Ga20S40Sb40 thin films'' [Thin Solid Films 457 (2004) 253 257] - NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS Erratum to ``Annealing dependence of optical properties of Ga20S75Sb5 and Ga20S40Sb40 thin films'' [Thin Solid Films 457 (2004) 253 257] Othman, A. ; Osman, M. ; Amer, H. ; Dahshan, A. Abstract Publication: Thin Solid Films Pub Date: December 2006 DOI: 10.1016/j.tsf.2005.01.053 Bibcode: 2006TSF...515.2824O full text sources Publisher | © The SAO/NASA Astrophysics Data System adshelp[at]cfa.harvard.edu The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative Agreement NNX16AC86A NASA logo Smithsonian logo Resources About ADS ADS Help What's New Careers@ADS Social @adsabs ADS Blog Project Switch to full ADS Is ADS down? (or …

The present paper reports the effect of replacement of selenium by antimony on the steady state and the transient photoconductivity in vacuum evaporated amorphous thin films of As₃₀Se_70−xSb_x (x = 2.5, 5, 7.5, 10, 12.5, 15 and 17.5 at.%). The composition dependence of the steady state photoconductivity at room temperature shows that the photoconductivity increases while the photosensitivity decreases with the increase in antimony content. The transient photoconductivity shows that the lifetime of the carrier decreases with increasing the light intensity. This decrease suggests that the photoconductivity mechanism in our samples was controlled by the transition trapping processes. Replacement of selenium by antimony results in a monotonic decrease in the band gap of As₃₀Se_70−xSb_x thin films. This behavior was interpreted on the basis of the chemical bond approach.

Thin films were thermally evaporated from ingot pieces of the As₃₀Se_70−xSb_x (with 2.5 ⩽ x ⩽ 17.5 at.%) glasses under vacuum of ∼10⁻⁵ Torr. Increasing Sb content was found to affect the thermal and optical properties of these films. Non-direct electronic transition was found to be responsible for the photon absorption inside the investigated films. The chemical bond approach has been applied successfully to interpret the decrease of the glass optical gap with increasing Sb content. Decreasing the thermal stability of the As₃₀Se_70−xSb_x specimen by increasing Sb content is responsible for occurring the amorphous–crystalline process at lower temperatures. Binary As₂Se₃ and Sb₂Se₃ phases are the main components of the stoichiometric As₃₀Se₆₀Sb₁₀ composition.

The crystallization kinetics of the quaternary Sb{sub 14.5}As{sub 29.5}Se{sub 53.5}Te{sub 2.5} glassy alloy was studied under non-isothermal conditions. The method was applied to the experimental data obtained by differential scanning calorimetry (DSC), using continuous-heating techniques. In addition, two approaches are used to analyze the dependence of glass transition temperature (T{sub g}) on the heating rate ({beta}). One is empirical linear relationship between (T{sub g}) and ln({beta}). The other approach is the use of straight line ln(T{sup 2}{sub g}/{beta}) vs. 1/T{sub g} for evaluation of the activation energy for glass transition. The phases at which the alloy crystallizes after the thermal process have been identified by X-ray diffraction. The diffractogram of the transformed material shows the presence of some crystallites of As, SbTe, AsSb, As{sub 2}Se{sub 3}, Sb{sub 2}Se{sub 3} and AsSe{sub 5}Te{sub 5} in the residual amorphous matrix. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Differential scanning calorimetry (DSC) under non-isothermal conditions is used to study the crystallization kinetics of Sb 14 As 29 Se 52 Te 5 chalcogenide glass. In addition, two approaches are used to analyze the dependence of glass transition temperature (T g) on the heating rate (α). One is empirical linear relationship between (T g) and ln (α). The second approach is the use of straight line ln (T g 2/α) vs. 1/T g for the evaluation of the activation energy for glass transition. The phases at which the alloy crystallizes after the thermal treatment have been identified by using X-ray diffraction. The diffractogram of the transformed material shows the presence of some crystallites of As, Te, AsSb, As 2 Se 3, Sb 2 Se 3 and AsSe. 5 Te. 5 in the residual amorphous matrix.

The crystallization kinetics of the quaternary Sb14. 5As29. 5Se53. 5Te2. 5 glassy alloy was studied under non‐isothermal conditions. The method was applied to the experimental data obtained by differential scanning calorimetry (DSC), using continuous‐heating techniques. In addition, two approaches are used to analyze the dependence of glass transition temperature (T g) on the heating rate (β). One is empirical linear relationship between (T g) and ln (β). The other approach is the use of straight line ln (T^2_\rmg/β) vs. 1/T g for evaluation of the activation energy for glass transition. The phases at which the alloy crystallizes after the thermal process have been identified by X‐ray diffraction. The diffractogram of the transformed material shows the presence of some crystallites of As, SbTe, AsSb, As2Se3, Sb2Se3 and AsSe5Te5 in the residual amorphous matrix.(© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA …

Bulk glasses of the system Ga₂₀Sb_xS_80−x (x = 5 and 40) were prepared for the first time by the known melt quenching technique. Non-isothermal differential scanning calorimetric (DSC) measurements of as-quenched Ga₂₀Sb_xS_80−x (x = 5 and 40) chalcogenide glasses reveal that the characteristic temperatures e.g. the glass transition temperature (T_g), the temperature corresponding to the maximum crystallization rate (T_p) recorded in the temperature range 400–650 K for x = 5 and 480–660 K for x = 40 are strongly dependent on heating rate and Sb content. Upon heating, these glasses show a single glass transition temperature (T_g) and double crystallization temperatures (T_p1 and T_p2) for x = 5 which overlapped and appear as a single crystallization peak (T_p) for x = 40. The activation energies of crystallization E_c were evaluated by three different methods. The crystallization data were examined in terms of …

Amorphous Ga₂₀S₇₅Sb₅ and Ga₂₀S₄₀Sb₄₀ thin films were prepared by thermal evaporation onto clean glass substrates. Transmittance and reflectance measurements were carried out at 300 K, in the wavelength range 400–800 nm, for the virgin and UV illuminated films. Reversible photodarkening is reported for the first time in those films. The photo-induced shift in the non-direct optical energy gap is determined and discussed in the light of current models of photodarkening. The effect of Sb content on the optical band gap and the shift of the absorption edge is also discussed in terms of the coordination number.

Amorphous Ga{sub 20}S{sub 75}Sb{sub 5} and Ga{sub 20}S{sub 40}Sb{sub 40} thin films were prepared onto glass substrates by using thermal evaporation method. The effect of annealing (under vacuum) at different temperatures on the optical parameters was investigated in the temperature range 373-593 K. The optical absorption coefficient ({alpha}) for the as-deposited and annealed films were calculated from the reflectance and transmittance measurements in the range 190-900 nm. X-Ray diffraction indicates that the as-deposited films and those annealed up to the glass transition temperature (T{sub g}) exhibit amorphous state. On annealing above the glass transition temperature these films show a polycrystalline structure. Analysis of the optical absorption data indicates that the optical band gap E{sub g}{sup opt} of these films obeys Tauc's relation for the allowed non-direct transition. It was found that the optical band gap E{sub g}{sup opt} increases with annealing temperature up to T{sub g}, whereas above T{sub g} there is a remarkable decrease. The obtained results were interpreted on the basis of amorphous- crystalline transformation.

Amorphous Ge{sub x} Se{sub 9}0-x Sb{sub 1}0 thin films prepared by thermal evaporation onto glass substrates. Reflectance and transmittance were measured in the wavelength range 190-900 nm. The optical properties of the as deposited and UV-irradiated films at different exposure times were reported. The compositional-dependence of the optical constants (absorption coefficient, the non-direct optical gap E{sub g}, refractive index (n)) were evaluated and discussed in terms of the Ge content.