Manipulating unintentional doping in graphene layers, which is influenced by environmental factors and supporting substrates, is of significant concern for the performance and advancement of graphene-based devices. In this context, laser-induced tuning of charge carriers in graphene facilitates the exploration of graphene’s properties in relation to its surroundings and enables laser-assisted functionalization. This has the potential to advance optoelectronic devices that utilize graphene on transparent dielectric substrates, such as Al 2 O 3. In this work, laser power (P L) in Raman spectroscopy is used as a convenient contactless tool to manipulate and control unintentional carrier concentration and Fermi level position (E F) in graphene/α-Al 2 O 3 (G/Al 2 O 3) under ambient conditions. Samples are annealed at 400 C for two hours in an (Ar+ H 2) atmosphere to remove any chemical residues. Analysis of the peak …