InAs/GaAs Quantum Dot Structures Covered by InGaAs Strain Reducing Layer Characterised by Photomodulated Reflectance

InAs/GaAs Quantum Dot Structures Covered by InGaAs Strain Reducing Layer Characterised by Photomodulated Reflectance

Research Authors
P. Hazdra, J. Oswald, M.Atef, J. Voves,, K. Kuldova, A. Hospodkova, E. Hulicius and J. Pangrac
Research Department
Electrical Engineering Department
Research Journal
In E-MRS Spring Meeting 2007 - Book of Abstracts,France, Strasbourg
Research Member
Mohamed Atef Elsayed Abdelaal
Research Pages
pp.715
Research Rank
3
Research Year
2007