Study of Tunneling Current Through Ultra-thin Gate Oxide MOSFET and its Effect on CMOS Circuits

Study of Tunneling Current Through Ultra-thin Gate Oxide MOSFET and its Effect on CMOS Circuits

Research Authors
M.A.Sayed and M.Atef
Research Department
Electrical Engineering Department
Research Journal
JOURNAL OF ENGINEERING SCIENCES

Research Member
Mohammed Abd Jawad Mohammed Al Sadd
Research Rank
2
Research Year
2005