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On the dielectric and magnetic properties of Al doped Pr: 123 for advanced devices: A comparison with ZnO

Research Abstract

or ZnO comparison, we report here the dielectric and magnetic properties of PrBa2Cu3-3xAl3xOy (Al:Pr123) samples with (0.00 ≤ x ≤ 1.00). The dielectric constant (ε′), ac electrical conductivity (σac) and F-factor were decreased as x increased to 1.00, but the q-factor was increased. As compared to ZnO, the x ≤ 0.05 samples show higher values of ε′, σac and F-factor, as well as q-factor, but at x ≥ 0.10. In addition, the binding energy was increased from 0.423 to 0.672 eV as x increased to 0.30, but above that it significantly enhanced until reach to 38.825 eV. The Cole-Cole plot shows a complete circle for the samples of x ≤ 0.05, and semicircular arcs for the x ≥ 0.10 and ZnO. Moreover, the impedance of grain and grain boundaries is significantly increased as x increases to 1.00, but they are lower than of ZnO. Although ZnO exhibits poor ferromagnetic behavior, the Al: Pr123 samples show strong ferromagnetic behavior with evaluated magnetization parameters. Moreover, these outcomes strongly recommend the Al: Pr123 samples, better than ZnO, for the devices of integrated circuits, solar cells, super-capacitors and spintronics.

Research Authors
A. Sedky, Atif Mossad Ali, M.A. Sayed, Abdullah Almohammedi
Research Date
Research Department
Research Journal
Results in Physics
Research Pages
106843
Research Publisher
Elsevier
Research Vol
52
Research Year
2023