This work introduces a new topology for designing low-phase noise (PN) dual-band voltage-controlled oscillator (VCO) by proposing orthogonally located inductors in 0.18-m CMOS. The inductors are implemented using five metal layers keeping the lowest layer empty to maximize the quality ( factor. The first inductor is two halves shunted octagonal loops using the top layer (M and utilized in cross-coupled VCO, while the second inductor is formed by four C-shaped shunted inductors using the lower four layers M and used in current-reuse (CR) VCO. The M inductor improves the -factor by more than 25%over one loop inductor in the frequency band of interest, while the M inductor uses four shunt layers to boost the -factor by 28% in -band compared to the single-layer inductor. The VCO oscillates from 22.36 to 23.4 GHz with PN of 112.4 dBc/Hz at 1 MHz and figure of merit (FoM) of 188.8 dBc/Hz