InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectanceb

InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectanceb

Research Authors
P. Hazdra, J. Oswald, M. Atef, K. Kuldova, A. Hospodkova, E. Hulicius and J. Pangrac
Research Department
Electrical Engineering Department
Research Journal
Materials Science and Engineering Journal: B
Research Member
Mohamed Atef Elsayed Abdelaal
Research Pages
pp.175-178
Research Rank
1
Research Vol
Vol. 147, No. 2
Research Year
2008